Princeton University

School of Engineering & Applied Science

Antimonide-Based Compound Semiconductors for High Speed, Lower Power Electronics

Dr. Laura Ruppalt, U.S. Naval Research Laboratory
Engineering Quadrangle, B418
Monday, December 9, 2013 - 2:00pm

Antimonide-based compound semiconductors, as well as the arsenides that share their 6.1-6.2 angstrom lattice constant, are increasingly viewed as promising candidates for advanced electronic devices.  Their high carrier mobilities, coupled with their narrow bandgaps, make these materials well-suited to analog and digital applications requiring high speeds and low power consumption.  Over the previous decade, the U.S. Naval Research Laboratory (NRL) has supported a variety of research efforts aimed towards the maturation of antimonide-based materials and devices.  In this talk, I will provide an overview of NRL’s recent research in antimonide-based materials for electronic applications, focusing particularly on recent device developments and approaches for dielectric integration using atomic layer deposition techniques.