Princeton University

School of Engineering & Applied Science

Mechanically Flexible Vertically Integrated a-IGZO Thin-Film Transistors with 500 nm Channel Length Fabricated on Free Standing Plastic Foil

Ms. Luisa Petti, Technical University in Zurich (ETHZ)
Engineering Quadrangle, B327
Friday, December 13, 2013 - 3:00pm

We report the first mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) vertical thin-film transistors (VTFTs) with 500 nm channel length, fabricated on a free-standing plastic foil, using a low temperature process <150°C. The VTFTs exhibit a well-shaped transfer characteristic, with an on/off current ratio >107 and a threshold voltage of 2.2 V. We demonstrate full device functionality down to 5 mm bending radius, even after 1000 bending cycles. These results prove that VTFTs are feasible for realizing compact and bendable electronic systems.