Princeton University

School of Engineering & Applied Science

Antoine Kahn

Stephen C. Macaleer '63 Professor in Engineering and Applied Science

Professor of Electrical Engineering

Vice Dean, School of Engineering and Applied Sciences

Room: B420 Engineering Quadrangle
Phone: 609-258-4642
Webpage: Kahn Lab:


  • Ph.D., Princeton University, 1978
  • M.S., Electrical Engineering, Princeton University, 1976
  • Diploma of Engineer in Electronics, Institut National Polytechnique de Grenoble, 1974

My research programs center on the electronic, chemical, structural and electrical properties of materials relevant to thin-film electronic devices. My interests span a range of semiconductor materials (elemental and compounds), but my current work focuses specifically on organic molecular and polymer semiconductors, dielectrics developed for applications in organic and molecular electronics, and the hot new class of optoelectronic materials called hybrid metal halide perovskites (MHP). Our group is particularly interested in engineering materials and interfaces that improve the performance of devices, with application to organic light-emitting diodes (OLEDs), field effect transistors (OFETs), organic photovoltaic cells (OPVs), MHP-based solar cells and light emitting diodes, and other thin-film devices applicable to large-area, flexible electronics.
On the organic scene, the quasi-infinite possibilities for chemical synthesis of new organic molecular compounds, combined with the unmatched ease of fabrication of organic semiconductor films by vacuum evaporation, liquid processing or printing on a variety of substrates, give organic semiconductors key advantages over other semiconductor materials, and open tremendous opportunities for innovation in device structures. Our research spans fundamental issues of electron-hole interaction in molecular semiconductors; chemistry and electronic structure of metal-organic and organic-organic heterojunctions; physics, implementation and impact of chemical (n- and p-) doping to control conductivity and carrier injection.
On the metal halide perovskite side, our work contributes to a better understanding of surface and interface properties of these fascinating materials. We are investigating their interfaces with metal oxides and organics (small molecules and polymers alike), which are all central to device performance.
Our group is involved in extensive collaborations with synthetic chemists, theoreticians, and device physicists in the US, Asia, and Europe, in academia, national laboratories, and industry. Our approach involves a variety of spectroscopic techniques for determining electronic structures, charge carrier transport measurements, morphological and structural tools, and device fabrication.

Honors and Awards

  • Fellow, School of Engineering of the University of Tokyo, Japan (elected, December 2015)
  • Stephen C. Macaleer ’63 Professor in Engineering and Applied Science (July 1, 2015)
  • Weston Visiting Professorship, Weizmann Institute of Science, Israel (2015-2018)
  • Listed among the “World’s Most Influential Scientific Minds”, Thomson Reuters 2014
  • Weston Visiting Professorships, Weizmann Institute of Science, Israel (2009-2012)
  • Fellow of the American Physical Society (elected, 2002)
  • Fellow of the American Vacuum Society (elected, 1999)
  • Presidential Young Investigator Award (National Science Foundation), 1984-1989.

Selected Publications

  1. Investigation of the high electron affinity molecular dopant F6-TCNNQ for hole-transport materials, Fengyu Zhang and Antoine Kahn, Adv. Funct. Mat. (accepted for publication, 2017)  DOI: 10.1002/adfm.201703780

  2. Beating the Thermodynamic Limit: Photo-Activation of n-Doping in Organic Semiconductors, Xin Lin, Berthold Wegner, Kyung M. Lee, Michael A. Fusella, Fengyu Zhang, Karttikay Moudgil, Barry P. Rand, Stephen Barlow, Seth R. Marder, Norbert Koch and Antoine Kahn, Nature Materials (accepted, 2017)

  3. Pairing of near-ultraviolet solar cells with electrochromic windows for smart management of the solar spectrum, Nicholas C. Davy, Melda Sezen, Jia Gao, Xin Lin, Amy Liu, Antoine Kahn and Yueh-Lin Loo, Nature Energy, 2, 17104 (2017) DOI 10.1038/nenergy.2017.104

  4. Valence and conduction band densities of states of metal halide perovskites: a combined experimental - theoretical study, James Endres, David A. Egger, Michael Kulbak, Ross A. Kerner, Lianfeng Zhao, Scott H. Silver, Gary Hodes, Barry P. Rand, David Cahen, Leeor Kronik, and Antoine Kahn, J. Phys. Chem. Lett. 7, 2722 (2016) DOI: 10.1021/acs.jpclett.6b00946

  5. P-doped organic semiconductor: potential replacement for PEDOT:PSS in organic photodetectors, Julie Herrbach, Amélie Revaux, Dominique Vuillaume and Antoine Kahn, Appl. Phys. Lett. 109, 073301 (2016) DOI: 10.1063/1.4961444

  6. High Work Function Molybdenum Oxide Hole Extraction Contacts in Hybrid Organic-Inorganic Perovskite Solar Cells, Philip Schulz, Jan O. Tiepelt, Jeffrey A. Christians, Igal Levine, Eran Edri, Erin Sanehira, Gary Hodes, David, Cahen, Antoine Kahn, ACS Appl. Mater. Inter. 8, 31491 (2016) DOI: 10.1021/acsami.6b10898

  7. Electronic structure of the CsPbBr3/polytriarylamine (PTAA) system, James Endres, Michael Kulbak, Lianfeng Zhao, Barry P. Rand, David Cahen, Gary Hodes, and Antoine Kahn, J. Appl. Phys. 121, 035304 (2017) DOI: 10.1063/1.4974471

  8. Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor, Xin Lin, Geoffrey E. Purdum, Swagat K. Mohapatra, Stephen Barlow, Seth R. Marder, Yueh-Lin Loo and Antoine Kahn, Chem. Mat. 28, 2677 (2016) DOI:  10.1021/acs.chemmater.6b00165

  9. Electronically passivated hole-blocking titanium dioxide/silicon heterojunction for hybrid silicon photovoltaics, Gabriel Man, Jeffrey Schwartz, James C. Sturm and Antoine Kahn, Adv. Mat. Int. 3, 1600026 (2016) DOI: 10.1002/admi.201600026

  10. Morphological tuning of the energetics in singlet fission organic solar cells, YunHui L. Lin, Michael A. Fusella, Oleg V. Kozlov,  Xin Lin,  Antoine Kahn,  Maxim S. Pshenichnikov and Barry P. Rand, Adv. Func. Mat. 26, 6489-6494 (2016)