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My field of research activity is the electrical properties of thin films and microstructures of semiconductors and solid-state physics. My current research at Princeton is on the fundamental properties of electronic materials, especially conduction in ultrasmall structures, transport through heterojunctions, heterojunction transistors, and quantum physics of electronic materials in strong magnetic fields and low temperatures, in particular, the quantum Hall regime (see figure below).
Before coming to Princeton sixteen years ago I had thirteen years of research experience in solid-state electronics at Bell Laboratories.
A demonstration of the fractional quantum Hall effect discovered by Tsui and Störmer, for which they were awarded the Nobel Prize in physics in 1998. Plotted are the diagonal(R) and Hall (RH) resistances of a two-dimensional electron gas at the interface of two semiconductors, as a function of magnetic field applied normal to the plane. The dashed diagonal line represents the classical Hall resistance, and the full drawn diagonal stepped curve the experimental results. The magnetic fields causing the steps are marked with arrows at which the diagonal resistance R is expected to be zero and absolute zero temperature. The step marked 1/3 was the first fraction discovered by Störmer and Tsui.